RS1L180GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

18A Ta 68A Tc

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 18A, 10V

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

72A

Avalanche Energy Rating (Eas) :

50 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

AEC-Q101

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Packaging :

Cut Tape (CT)

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3230pF @ 30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3W Ta

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

18A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0085Ohm