RS1L120GNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Number of Terminations :

5

Surface Mount :

yes

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0198Ohm

Current - Continuous Drain (Id) @ 25°C :

12A Ta 36A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F5

Avalanche Energy Rating (Eas) :

10 mJ

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 30V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Package / Case :

8-PowerTDFN

Drain Current-Max (Abs) (ID) :

12A

Rds On (Max) @ Id, Vgs :

12.7m Ω @ 12A, 10V

Pulsed Drain Current-Max (IDM) :

48A

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.7V @ 200μA

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Power Dissipation-Max :

3W Ta