RRR030P03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

50 ns

Time@Peak Reflow Temperature-Max (s) :

10

Height :

900μm

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Length :

2.9mm

Drain-source On Resistance-Max :

0.075Ohm

Power Dissipation :

1W

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Width :

1.6mm

Power Dissipation-Max :

1W Ta

RoHS Status :

ROHS3 Compliant

Published :

2009

Continuous Drain Current (ID) :

3A

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-30V

Element Configuration :

Single

Vgs (Max) :

±20V

Number of Pins :

3

Fall Time (Typ) :

35 ns

Factory Lead Time :

20 Weeks

Radiation Hardening :

No

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Mount :

Surface Mount

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

75m Ω @ 3A, 10V

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Number of Elements :

1

Rise Time :

18ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Package / Case :

SC-96

Drain Current-Max (Abs) (ID) :

3A

Pin Count :

3