RRR015P03TL
- Mfr.Part #
- RRR015P03TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 1.5A TSMT3
- Stock
- 36,113
- In Stock :
- 36,113
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Rise Time :
- 8ns
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- -30V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 540mW Ta
- Package / Case :
- SC-96
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 13 ns
- Continuous Drain Current (ID) :
- 1.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Turn On Delay Time :
- 12 ns
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 1.5A, 10V
- Turn-Off Delay Time :
- 40 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 6.5nC @ 10V
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Factory Lead Time :
- 20 Weeks
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 10V
- Mount :
- Surface Mount
- Published :
- 2012
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Datasheets
- RRR015P03TL

P-Channel Tape & Reel (TR) 160m Ω @ 1.5A, 10V ±20V 230pF @ 10V 6.5nC @ 10V 30V SC-96
RRR015P03TL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 230pF @ 10V.This device conducts a continuous drain current (ID) of 1.5A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
RRR015P03TL Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 40 ns
a 30V drain to source voltage (Vdss)
RRR015P03TL Applications
There are a lot of ROHM Semiconductor
RRR015P03TL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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