RQ1E070RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 10V

Rise Time :

35ns

Pin Count :

8

Transistor Element Material :

SILICON

Turn-Off Delay Time :

140 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Factory Lead Time :

20 Weeks

Lead Free :

Lead Free

Number of Elements :

1

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

10

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Rds On (Max) @ Id, Vgs :

17m Ω @ 7A, 10V

Drain Current-Max (Abs) (ID) :

7A

Pbfree Code :

yes

Turn On Delay Time :

16 ns

FET Type :

P-Channel

Terminal Finish :

Tin/Copper (Sn/Cu)

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Vgs (Max) :

±20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Breakdown Voltage :

-30V

Continuous Drain Current (ID) :

7A

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Fall Time (Typ) :

70 ns

Power Dissipation-Max :

550mW Ta

Operating Temperature :

150°C TJ