RQ1E050RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

5A

Number of Elements :

1

Continuous Drain Current (ID) :

5A

Mount :

Surface Mount

Number of Channels :

1

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Copper (Sn/Cu)

Turn-Off Delay Time :

90 ns

Pin Count :

8

Rds On (Max) @ Id, Vgs :

31m Ω @ 5A, 10V

FET Type :

P-Channel

ECCN Code :

EAR99

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Power Dissipation-Max :

700mW Ta

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Lead Free :

Lead Free

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Fall Time (Typ) :

50 ns

JESD-609 Code :

e2

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Package / Case :

8-SMD, Flat Lead

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

10

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

Pulsed Drain Current-Max (IDM) :

20A

Factory Lead Time :

20 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

Vgs (Max) :

±20V

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 1mA