RP1L080SNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

24m Ω @ 8A, 10V

Vgs (Max) :

±20V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 10V

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Mounting Type :

Surface Mount

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 1mA

Published :

2006

Drain Current-Max (Abs) (ID) :

8A

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.028Ohm

JESD-30 Code :

R-PDSO-F6

Pin Count :

6

Number of Elements :

1

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

2W Ta

Pulsed Drain Current-Max (IDM) :

32A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-SMD, Flat Leads

Operating Temperature :

150°C TJ

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V