RP1L055SNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Pulsed Drain Current-Max (IDM) :

22A

Drain-source On Resistance-Max :

0.063Ohm

Number of Terminations :

6

ECCN Code :

EAR99

Power Dissipation-Max :

2W Ta

Vgs(th) (Max) @ Id :

3V @ 1mA

Package / Case :

6-SMD, Flat Leads

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Rds On (Max) @ Id, Vgs :

49m Ω @ 5.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Position :

Dual

Mount :

Surface Mount

Continuous Drain Current (ID) :

5.5A

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2011

JESD-30 Code :

R-PDSO-F6

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE