RMW280N03TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Published :

2011

Package / Case :

8-SMD, Flat Lead

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

94 ns

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 28A, 10V

Rise Time :

81ns

Vgs (Max) :

±20V

Power Dissipation-Max :

3W Ta

Pulsed Drain Current-Max (IDM) :

112A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

50 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Lead Free :

Lead Free

FET Type :

N-Channel

Power Dissipation :

3W

Number of Terminations :

8

Pbfree Code :

yes

Continuous Drain Current (ID) :

28A

Number of Elements :

1

Radiation Hardening :

No

Pin Count :

8

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V