RMW200N03TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

60 ns

FET Type :

N-Channel

Number of Terminations :

8

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

20A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2011

Drain-source On Resistance-Max :

0.0056Ohm

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SMD, Flat Lead

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 20A, 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Rise Time :

50ns

Fall Time (Typ) :

20 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 15V

ECCN Code :

EAR99

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Number of Pins :

8

Power Dissipation :

3W

Power Dissipation-Max :

3W Ta