RHP030N03T100

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

120mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e2

Power Dissipation-Max :

500mW Ta

Element Configuration :

Single

Power Dissipation :

2W

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Rise Time :

11ns

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Mount :

Surface Mount

Number of Pins :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Voltage - Rated DC :

30V

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 10V

Package / Case :

TO-243AA

HTS Code :

8541.21.00.95

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

3A

Terminal Form :

Flat

Height :

1.5mm

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.5V

Turn-Off Delay Time :

15 ns

Width :

2.5mm

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Current Rating :

3A

Turn On Delay Time :

7 ns

Continuous Drain Current (ID) :

3A

Published :

2006

Length :

4.5mm

FET Type :

N-Channel

Number of Elements :

1

Terminal Finish :

TIN COPPER

Pin Count :

3

Number of Terminations :

3

Fall Time (Typ) :

4.5 ns

Drain to Source Breakdown Voltage :

30V