RHP020N06T100

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Current Rating :

2A

Rise Time :

10ns

Factory Lead Time :

16 Weeks

JESD-609 Code :

e2

REACH SVHC :

No SVHC

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

200m Ω @ 2A, 10V

Turn On Delay Time :

7 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Lead Free :

Lead Free

Case Connection :

DRAIN

Number of Terminations :

3

Power Dissipation :

2W

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

22 ns

Number of Pins :

3

Voltage - Rated DC :

60V

Package / Case :

TO-243AA

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2.5V

Fall Time (Typ) :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Published :

2006

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Terminal Finish :

TIN COPPER

Radiation Hardening :

No

Pin Count :

3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

500mW Ta

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

2A

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

2A

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.95