RGTVX2TS65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

MSL :

MSL 1 - Unlimited

Power - Max :

319 W

Brand :

Rohm Semiconductor

Current - Collector (Ic) (Max) :

111 A

Test Condition :

400V, 60A, 10Ohm, 15V

Operating Temperature :

-40°C ~ 175°C (TJ)

Product Type :

IGBT Transistors

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 60A

Packaging :

Tube

RoHS :

Details

Minimum Operating Temperature :

- 40 C

Product Status :

Active

Technology :

Si

Gate Charge :

123 nC

Power Dissipation :

319W

Current - Collector Pulsed (Icm) :

240 A

Td (on/off) @ 25°C :

49ns/150ns

Maximum Operating Temperature :

+ 175 C

Configuration :

Single

Subcategory :

IGBTs

Series :

-

Mounting Type :

Through Hole

Manufacturer :

Rohm Semiconductor

Input Type :

Standard

Collector Emitter Saturation Voltage :

1.5V

Mounting Style :

Through Hole

Supplier Device Package :

TO-247N

Package / Case :

TO-247-3

Product Category :

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max) :

650 V

Package :

Tube

Switching Energy :

2.08mJ (on), 1.15mJ (off)

IGBT Type :

Trench Field Stop

Continuous Collector Current :

111A