RF1S9640

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

790 mJ

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

JESD-609 Code :

e0

Reach Compliance Code :

not_compliant

Number of Elements :

1

Power Dissipation-Max (Abs) :

125W

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Operating Temperature (Max) :

150°C

JEDEC-95 Code :

TO-262AA

ECCN Code :

EAR99

Surface Mount :

No

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

DS Breakdown Voltage-Min :

200V

JESD-30 Code :

R-PSIP-T3

Polarity/Channel Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

44A

Drain Current-Max (Abs) (ID) :

11A

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.5Ohm