RF1S9540

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

19A

Drain-source On Resistance-Max :

0.2Ohm

Avalanche Energy Rating (Eas) :

960 mJ

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

150W

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

76A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Lead (Sn/Pb)

JEDEC-95 Code :

TO-262AA

Number of Terminals :

3

Polarity/Channel Type :

P-Channel

ECCN Code :

EAR99

JESD-609 Code :

e0

Operating Temperature (Max) :

175°C

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE