RF1S9530

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.3Ohm

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

48A

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

75W

Surface Mount :

No

JEDEC-95 Code :

TO-262AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

100V

Avalanche Energy Rating (Eas) :

500 mJ

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Elements :

1

Operating Temperature (Max) :

150°C

Polarity/Channel Type :

P-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

12A

Terminal Position :

Single