RF1S640SM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

580 mJ

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.18ohm

Terminal Position :

Single

Number of Terminals :

2

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

72A

Qualification Status :

Not Qualified

Number of Elements :

1

DS Breakdown Voltage-Min :

200V

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-263AB

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

18A