RF1S540SM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

150W

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

JESD-609 Code :

e0

Number of Elements :

1

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Number of Terminals :

2

Terminal Finish :

Tin/Lead (Sn/Pb)

Pulsed Drain Current-Max (IDM) :

110A

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

28A

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.077Ohm

Avalanche Energy Rating (Eas) :

230 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Operating Temperature (Max) :

150°C

Transistor Element Material :

SILICON