RF1S540

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Avalanche Energy Rating (Eas) :

230 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-262AA

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

Number of Terminals :

3

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

110A

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max (Abs) :

150W

Drain Current-Max (Abs) (ID) :

28A

Operating Temperature (Max) :

150°C

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.077Ohm

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN