RF1S540

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature (Max) :

150°C

Pulsed Drain Current-Max (IDM) :

110A

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Power Dissipation-Max (Abs) :

150W

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.077Ohm

Avalanche Energy Rating (Eas) :

230 mJ

Number of Terminals :

3

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

28A

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-262AA

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Number of Elements :

1