RF1S50N06

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.022Ohm

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

50A

Surface Mount :

yes

Turn On Time-Max (ton) :

95ns

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

60V

Operating Temperature (Max) :

175°C

Power Dissipation Ambient-Max :

131W

Operating Mode :

ENHANCEMENT MODE

Turn Off Time-Max (toff) :

75ns

Number of Terminals :

2

JEDEC-95 Code :

TO-263AB

Transistor Application :

SWITCHING