RF1S45N03L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

Operating Temperature (Max) :

175°C

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

45A

Qualification Status :

Not Qualified

Turn On Time-Max (ton) :

260ns

Power Dissipation Ambient-Max :

90W

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

JEDEC-95 Code :

TO-263AB

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Terminals :

2

Turn Off Time-Max (toff) :

60ns

Power Dissipation-Max (Abs) :

90W

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.022Ohm

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED