RF1S30P06SM9A

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-263AB

Number of Terminals :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Additional Feature :

MEGAFET

Surface Mount :

yes

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

30A

Terminal Position :

Single

Drain-source On Resistance-Max :

0.065Ohm

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

P-Channel

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Operating Temperature (Max) :

175°C

Terminal Finish :

Tin/Lead (Sn/Pb)

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

135W