RF1S30P06SM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Terminal Position :

Single

Surface Mount :

yes

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

30A

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Number of Elements :

1

Additional Feature :

MEGAFET

Power Dissipation-Max (Abs) :

135W

Drain-source On Resistance-Max :

0.065Ohm

Polarity/Channel Type :

P-Channel

ECCN Code :

EAR99

Number of Terminals :

2

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

175°C

JEDEC-95 Code :

TO-263AB

RoHS Status :

Non-RoHS Compliant