RD3S100AAFRATL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

Rise Time :

20 ns

Power Dissipation (Max) :

85W (Tc)

Base Product Number :

RD3S100

Mounting :

Surface Mount

Package Type :

DPAK

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Product Category :

MOSFET

Power Dissipation :

85(W)

Operating Temperature Classification :

Military

Polarity :

N

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

TO-252

RoHS :

Details

Vgs (Max) :

±20V

Gate-Source Voltage (Max) :

±20(V)

Product Type :

MOSFET

Operating Temp Range :

-55C to 150C

Manufacturer :

Rohm Semiconductor

Number of Elements :

1

Transistor Polarity :

N-Channel

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

190 V

Product Status :

Active

Rds On (Max) @ Id, Vgs :

182mOhm @ 5A, 10V

Rad Hardened :

No

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Channel Mode :

Enhancement

Packaging :

Cut Tape

Channel Type :

N Channel

Brand :

Rohm Semiconductor

Series :

Automotive, AEC-Q101

MSL :

-

Pin Count :

2 +Tab

Operating Temperature :

150°C (TJ)

Continuous Drain Current :

10(A)

Qualification :

AEC-Q101

Number of Channels :

1 Channel

Subcategory :

MOSFETs

FET Type :

N-Channel

Continuous Drain Current Id :

10A

Package :

Digi-Reel?

Drain-Source On-Volt :

190(V)

Gate Charge (Qg) (Max) @ Vgs :

52 nC @ 10 V

Type :

Power MOSFET

FET Feature :

-

Vgs(th) (Max) @ Id :

2.5V @ 1mA