RD3S075CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

336m Ω @ 3.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

DS Breakdown Voltage-Min :

190V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.347Ohm

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

7.5A

Power Dissipation-Max :

52W Tc

Surface Mount :

yes

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Avalanche Energy Rating (Eas) :

4.81 mJ

Transistor Element Material :

SILICON

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

190V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

30A