RCX330N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

4.5nF

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

74.8 mJ

Drain to Source Breakdown Voltage :

250V

Radiation Hardening :

No

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

33A Ta

Case Connection :

Isolated

Number of Pins :

3

Turn On Delay Time :

50 ns

Number of Elements :

1

Fall Time (Typ) :

140 ns

FET Type :

N-Channel

Width :

4.8mm

Number of Terminations :

3

Continuous Drain Current (ID) :

33A

Factory Lead Time :

16 Weeks

Drain to Source Resistance :

77mOhm

Turn-Off Delay Time :

120 ns

Transistor Element Material :

SILICON

Published :

2013

ECCN Code :

EAR99

Mount :

Through Hole

Pin Count :

3

Rise Time :

200ns

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Height :

15.4mm

Packaging :

Bulk

Power Dissipation :

40W

Gate to Source Voltage (Vgs) :

30V

Length :

10.3mm

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.23W Ta 40W Tc