RCX300N20

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

140A

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

396 mJ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

200V

Mount :

Through Hole

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

30A

Drain Current-Max (Abs) (ID) :

70A

Published :

2012

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0427Ohm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Application :

SWITCHING

Terminal Position :

Single

DS Breakdown Voltage-Min :

200V

Power Dissipation-Max :

2.23W Ta 40W Tc

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

80m Ω @ 15A, 10V

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

JEDEC-95 Code :

TO-220AB