RCX220N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

22A

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

88A

Drain-source On Resistance-Max :

0.14Ohm

DS Breakdown Voltage-Min :

250V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Avalanche Energy Rating (Eas) :

36.8 mJ

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

140m Ω @ 11A, 10V

Mounting Type :

Through Hole

Number of Elements :

1

Published :

2012

Mount :

Through Hole

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

250V

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.23W Ta 40W Tc

Vgs (Max) :

±30V

Case Connection :

Isolated

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant