RCX200N20

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

DS Breakdown Voltage-Min :

200V

Drain-source On Resistance-Max :

0.0427Ohm

Continuous Drain Current (ID) :

20A

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Published :

2012

Case Connection :

Isolated

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

396 mJ

HTS Code :

8541.29.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

130m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

5V @ 1mA

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

200V

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

140A

Power Dissipation-Max :

2.23W Ta 40W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

70A

Packaging :

Bulk

Number of Elements :

1