RCJ451N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

211W

Vgs (Max) :

±30V

Number of Channels :

1 Channel

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Manufacturer :

Rohm Semiconductor

Rds On (Max) @ Id, Vgs :

55mOhm @ 22.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4200 pF @ 25 V

Pin Count :

3

Rise Time :

210 ns

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

80 nC @ 10 V

Continuous Drain Current Id :

45A

Drain to Source Voltage (Vdss) :

200 V

Channel Type :

N Channel

Channel Mode :

Enhancement

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS :

Details

Configuration :

Single

Supplier Device Package :

TO-263S

Brand :

Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C :

45A (Tc)

Package Type :

TO-263S

Qualification :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Number of Elements per Chip :

1

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Operating Temperature :

150°C (TJ)

Subcategory :

MOSFETs

Packaging :

MouseReel

Vgs(th) (Max) @ Id :

5V @ 1mA

FET Feature :

-

Power Dissipation (Max) :

1.56W (Ta), 211W (Tc)