RCJ450N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.055Ohm

Rds On (Max) @ Id, Vgs :

55m Ω @ 22.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

1.56W Ta 40W Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Rise Time :

210ns

Mount :

Surface Mount

Terminal Position :

Single

Continuous Drain Current (ID) :

45A

DS Breakdown Voltage-Min :

200V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Fall Time (Typ) :

70 ns

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

160 mJ

Published :

2011

Turn-Off Delay Time :

90 ns

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Number of Pins :

83

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

Turn On Delay Time :

52 ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

180A

ECCN Code :

EAR99