RCJ330N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

1.56W Ta 40W Tc

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

74.8 mJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

20 Weeks

Length :

10.4mm

Rise Time :

200ns

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Turn On Delay Time :

50 ns

Number of Channels :

1

Height :

4.7mm

Mounting Type :

Surface Mount

Width :

9.2mm

Pin Count :

3

Published :

2013

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Pins :

83

Turn-Off Delay Time :

120 ns

Transistor Element Material :

SILICON

Fall Time (Typ) :

140 ns

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

5V @ 1mA

Drain to Source Breakdown Voltage :

250V

Rds On (Max) @ Id, Vgs :

105m Ω @ 16.5A, 10V

Continuous Drain Current (ID) :

33A

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

33A Tc