RCJ300N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

70A

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.56W Ta 40W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Factory Lead Time :

20 Weeks

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Published :

2016

DS Breakdown Voltage-Min :

200V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

140A

Mount :

Surface Mount

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

396 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

FET Type :

N-Channel

Continuous Drain Current (ID) :

30A

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Temperature :

150°C TJ

Number of Pins :

83

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0427Ohm

Rds On (Max) @ Id, Vgs :

80m Ω @ 15A, 10V