R6547KNZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Power Dissipation-Max :

480W Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

5V @ 1.72mA

FET Type :

N-Channel

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

650V

DS Breakdown Voltage-Min :

650V

Pulsed Drain Current-Max (IDM) :

141A

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

80m Ω @ 25.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1222 mJ

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain-source On Resistance-Max :

0.08Ohm

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

47A

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Terminal Position :

Single

Mounting Type :

Through Hole

Transistor Element Material :

SILICON