R6547ENZ4C13

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Mfr.Part #
R6547ENZ4C13
Manufacturer
ROHM Semiconductor
Package / Case
TO-247G-3
Datasheet
Download
Description
650V 47A TO-247, LOW-NOISE POWER
Stock
509
In Stock :
509

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
Rohm Semiconductor
FET Feature :
-
Drive Voltage (Max Rds On, Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
47A (Tc)
Package :
Tube
Product Status :
Active
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3800 pF @ 25 V
Brand :
Rohm Semiconductor
Drain to Source Voltage (Vdss) :
650 V
Technology :
Si
Mounting Type :
Through Hole
Configuration :
Single
Product Type :
MOSFET
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
80mOhm @ 25.8A, 10V
Subcategory :
MOSFETs
Series :
-
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Package / Case :
TO-247G-3
Gate Charge (Qg) (Max) @ Vgs :
150 nC @ 10 V
Maximum Operating Temperature :
+ 150 C
Channel Mode :
Enhancement
Supplier Device Package :
TO-247G
Transistor Polarity :
N-Channel
RoHS :
Details
Mounting Style :
Through Hole
Operating Temperature :
150°C (TJ)
Number of Channels :
1 Channel
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 1.72mA
Rise Time :
120 ns
Power Dissipation (Max) :
480W (Tc)
Product Category :
MOSFET
Datasheets
R6547ENZ4C13
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor R6547ENZ4C13 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247G-3, Operating Temperature:150°C (TJ), Number of Channels:1 Channel, R6547ENZ4C13 pinout, R6547ENZ4C13 datasheet PDF, R6547ENZ4C13 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor R6547ENZ4C13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor R6547ENZ4C13


Si N-Channel Tube 80mOhm @ 25.8A, 10V ±20V 3800 pF @ 25 V 150 nC @ 10 V 650 V TO-247G-3

R6547ENZ4C13 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3800 pF @ 25 V.This transistor requires a drain-source voltage (Vdss) of 650 V.

R6547ENZ4C13 Features


a 650 V drain to source voltage (Vdss)


R6547ENZ4C13 Applications


There are a lot of ROHM Semiconductor
R6547ENZ4C13 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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