R6524ENZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Power Dissipation (Max) :

245W (Tc)

Product Status :

Active

Qualification :

-

Current - Continuous Drain (Id) @ 25°C :

24A (Tc)

MSL :

MSL 1 - Unlimited

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

FET Feature :

-

Drain to Source Voltage (Vdss) :

650 V

Continuous Drain Current Id :

24A

Vgs(th) (Max) @ Id :

4V @ 750μA

Mounting Type :

Through Hole

FET Type :

N-Channel

Channel Type :

N Channel

Power Dissipation :

245W

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

150°C (TJ)

Package / Case :

TO-247-3

Supplier Device Package :

TO-247G

Input Capacitance (Ciss) (Max) @ Vds :

1650 pF @ 25 V

Rds On (Max) @ Id, Vgs :

185mOhm @ 11.3A, 10V