R6025JNZC8
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- Mfr.Part #
- R6025JNZC8
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 25A TO3PF
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 57nC @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 15V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 85W Tc
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 100V
- Drain to Source Voltage (Vdss) :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 7V @ 4.5mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-3P-3 Full Pack
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 182m Ω @ 12.5A, 15V
- Mounting Type :
- Through Hole
- Datasheets
- R6025JNZC8
N-Channel Tube 182m Ω @ 12.5A, 15V ±30V 1900pF @ 100V 57nC @ 15V 600V TO-3P-3 Full Pack
R6025JNZC8 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900pF @ 100V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (15V), this device helps reduce its overall power consumption.
R6025JNZC8 Features
a 600V drain to source voltage (Vdss)
R6025JNZC8 Applications
There are a lot of ROHM Semiconductor
R6025JNZC8 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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