R6024KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Bulk

Vgs(th) (Max) @ Id :

5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Power Dissipation-Max :

74W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

72A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

497 mJ

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

24A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Published :

2015

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Threshold Voltage :

5V

Number of Elements :

1

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

165m Ω @ 11.3A, 10V

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Case Connection :

Isolated

DS Breakdown Voltage-Min :

600V

Drain-source On Resistance-Max :

0.165Ohm

Number of Terminations :

3

Mounting Type :

Through Hole