R6024ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Package / Case :

TO-3P-3 Full Pack

Continuous Drain Current (ID) :

24A

Vgs(th) (Max) @ Id :

4V @ 1mA

Factory Lead Time :

10 Weeks

Number of Terminations :

3

Number of Elements :

1

Published :

2014

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Reach Compliance Code :

not_compliant

Operating Temperature :

150°C TJ

Power Dissipation-Max :

120W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain-source On Resistance-Max :

0.165Ohm

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Pulsed Drain Current-Max (IDM) :

72A

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

497 mJ

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Vgs (Max) :

±20V

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

165m Ω @ 11.3A, 10V

Mount :

Through Hole