R6020FNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

40 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 25V

Rise Time :

70ns

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

80A

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Number of Pins :

3

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.25Ohm

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

250m Ω @ 10A, 10V

Power Dissipation-Max :

50W Tc

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

20A Tc

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Turn-Off Delay Time :

170 ns

Avalanche Energy Rating (Eas) :

26.7 mJ

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 1mA

Terminal Position :

Single

DS Breakdown Voltage-Min :

600V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

20A

Transistor Application :

SWITCHING

Turn On Delay Time :

50 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Packaging :

Bulk

Case Connection :

Isolated