R6020ENZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Channel Type :

N Channel

Brand :

Rohm Semiconductor

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Supplier Device Package :

TO-247

Power Dissipation (Max) :

231W (Tc)

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Product Category :

MOSFET

FET Feature :

-

Package :

Tube

FET Type :

N-Channel

Power Dissipation :

231W

Continuous Drain Current Id :

20A

Manufacturer :

Rohm Semiconductor

Configuration :

Single

Operating Temperature :

150°C (TJ)

Transistor Type :

1 N-Channel

Subcategory :

MOSFETs

Qualification :

-

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Product Status :

Active

Package / Case :

TO-247-3

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

MSL :

MSL 1 - Unlimited

Series :

-

Channel Mode :

Enhancement

Base Product Number :

R6020

Rds On (Max) @ Id, Vgs :

196mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tube

Rise Time :

53 ns

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Product Type :

MOSFET

RoHS :

Details

Drain to Source Voltage (Vdss) :

600 V