R6020ENX
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- Mfr.Part #
- R6020ENX
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO220FM
- Stock
- 23,897
- In Stock ：
- 23,897
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 20A
- Turn-Off Delay Time :
- 150 ns
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Packaging :
- Bulk
- DS Breakdown Voltage-Min :
- 600V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 196m Ω @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Length :
- 10.3mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 15.4mm
- Published :
- 2014
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.8mm
- Turn On Delay Time :
- 35 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Power Dissipation-Max :
- 50W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 18 Weeks
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- FET Type :
- N-Channel
- Threshold Voltage :
- 4V
- Datasheets
- R6020ENX
N-Channel Bulk 196m Ω @ 10A, 10V ±20V 1400pF @ 25V 60nC @ 10V 600V TO-220-3 Full Pack
R6020ENX Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R6020ENX Features
a continuous drain current (ID) of 20A
the turn-off delay time is 150 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6020ENX Applications
There are a lot of ROHM Semiconductor
R6020ENX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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