R6020ANZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2011

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Vgs(th) (Max) @ Id :

4.15V @ 1mA

Drain-source On Resistance-Max :

0.22Ohm

Package / Case :

TO-3P-3 Full Pack

Transistor Element Material :

SILICON

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

26.7 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

80A

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Packaging :

Tube

FET Type :

N-Channel

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

220m Ω @ 10A, 10V

Power Dissipation-Max :

120W Tc

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

20A

Vgs (Max) :

±30V

Transistor Application :

SWITCHING