R6018ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

72A

Published :

2011

Continuous Drain Current (ID) :

18A

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

65 ns

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

37 ns

Gate to Source Voltage (Vgs) :

30V

Rise Time :

85ns

Rds On (Max) @ Id, Vgs :

270m Ω @ 9A, 10V

Lead Free :

Lead Free

Number of Channels :

1

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.27Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

155 ns

Number of Elements :

1

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Power Dissipation-Max :

100W Tc