R6015KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

27.5nC @ 10V

Power Dissipation-Max :

60W Tc

Published :

2017

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.5A, 10V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Avalanche Energy Rating (Eas) :

284 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

45A

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

15A

ECCN Code :

EAR99

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.29Ohm