R6015KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 1mA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Terminal Position :

Single

Power Dissipation-Max :

184W Tc

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Published :

2017

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

45A

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

Factory Lead Time :

20 Weeks

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

284 mJ

Drain-source On Resistance-Max :

0.29Ohm

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

37.5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

15A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED