R6015FNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

15 mJ

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance :

1.66nF

Package / Case :

SC

Transistor Application :

SWITCHING

Number of Pins :

83

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Rds On Max :

350 mΩ

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.35Ohm

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

60A

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

50W

Number of Elements :

1

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant