R6015ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Published :

2012

RoHS Status :

ROHS3 Compliant

Rise Time :

50ns

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

60A

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Turn-Off Delay Time :

150 ns

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Terminal Finish :

Tin/Copper (Sn/Cu)

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

100W Tc

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Turn On Delay Time :

50 ns

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

15A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

30V

Mount :

Surface Mount

DS Breakdown Voltage-Min :

600V

Pbfree Code :

yes

Fall Time (Typ) :

60 ns

Number of Elements :

1

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

300m Ω @ 7.5A, 10V

Drain to Source Voltage (Vdss) :

600V