R6014YNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

54W (Tc)

Number of Channels :

1 Channel

Product Status :

Active

Package :

Tube

Supplier Device Package :

TO-220FM

Operating Temperature :

150°C (TJ)

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Transistor Polarity :

N-Channel

Power Dissipation :

54W

Series :

-

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±30V

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

600 V

Channel Type :

N Channel

Channel Mode :

Enhancement

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

6V @ 1.4mA

Input Capacitance (Ciss) (Max) @ Vds :

890 pF @ 100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V, 12V

Rds On (Max) @ Id, Vgs :

260mOhm @ 5A, 12V

Qualification :

-

Continuous Drain Current Id :

9A