R6012FNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Mount :

Through Hole

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.51Ohm

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 1mA

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Packaging :

Bulk

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Number of Pins :

3

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

10 Weeks

Pulsed Drain Current-Max (IDM) :

48A

Avalanche Energy Rating (Eas) :

9.6 mJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

510m Ω @ 6A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Fall Time (Typ) :

20 ns

Case Connection :

Isolated

Power Dissipation-Max :

50W Tc

Turn-Off Delay Time :

77 ns

Drain to Source Voltage (Vdss) :

600V

Turn On Delay Time :

30 ns

Transistor Application :

SWITCHING

Rise Time :

37ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

12A

JEDEC-95 Code :

TO-220AB